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L6391DTR
Integrated Circuits (ICs)

L6391DTR

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STMicroelectronics

HIGH VOLTAGE HIGH AND LOW-SIDE DRIVER

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L6391DTR
Integrated Circuits (ICs)

L6391DTR

Active
STMicroelectronics

HIGH VOLTAGE HIGH AND LOW-SIDE DRIVER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationL6391DTR
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]430 mA
Current - Peak Output (Source, Sink) [custom]290 mA
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH1.9 V, 1.1 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case3.9 mm, 0.154 in
Package / Case14-SOIC
Rise / Fall Time (Typ)75 ns
Rise / Fall Time (Typ)35 ns
Supplier Device Package14-SO
Voltage - Supply [Max]20 V
Voltage - Supply [Min]12.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1000$ 1.73

Description

General part information

L6391 Series

The L6391 is a high voltage device manufactured with the BCD™ "OFF-LINE" technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing the microcontroller/DSP.

An integrated comparator is available for protections against overcurrent, overtemperature, etc.