L6391 Series

High voltage high and low-side driver

Catalog

High voltage high and low-side driver

Part	Channel Type	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Package / Case	Package / Case	Voltage - Supply [Min]	Voltage - Supply [Max]	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Driven Configuration	Mounting Type	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Supplier Device Package	Logic Voltage - VIL, VIH	Gate Type
STMicroelectronics L6391D	Independent	600 V	-40 °C	150 °C	Non-Inverting	0.154 in 3.9 mm	14-SOIC	12.5 V	20 V	75 ns	35 ns	Half-Bridge	Surface Mount	2	430 mA	290 mA	14-SO	1.1 V 1.9 V	IGBT MOSFET (N-Channel)
STMicroelectronics L6391DTR	Independent	600 V	-40 °C	150 °C	Non-Inverting	0.154 in 3.9 mm	14-SOIC	12.5 V	20 V	75 ns	35 ns	Half-Bridge	Surface Mount	2	430 mA	290 mA	14-SO	1.1 V 1.9 V	IGBT MOSFET (N-Channel)

Catalog

High voltage high and low-side driver

Description

The L6391 is a high voltage device manufactured with the BCD™ "OFF-LINE" technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing the microcontroller/DSP. An integrated comparator is available for protections against overcurrent, overtemperature, etc.