Discrete Semiconductor Products
STGP19NC60HD
ActiveSTMicroelectronics
19 A, 600 V, VERY FAST IGBT WITH ULTRAFAST DIODE
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Discrete Semiconductor Products
STGP19NC60HD
ActiveSTMicroelectronics
19 A, 600 V, VERY FAST IGBT WITH ULTRAFAST DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP19NC60HD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Gate Charge | 53 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 130 W |
| Reverse Recovery Time (trr) | 31 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 189 µJ, 85 µJ |
| Td (on/off) @ 25°C [Max] | 97 ns |
| Td (on/off) @ 25°C [Min] | 25 ns |
| Test Condition | 390 V, 15 V, 10 Ohm, 12 A |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGP19NC60HD Series
These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.