Discrete Semiconductor Products

UT6K3TCR1

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MOSFET 2N-CH 30V 5.5A HUML2020L8

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 5.5A HUML2020L8

Technical Specifications

Parameters and characteristics for this part

Specification	UT6K3TCR1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerUDFN
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	HUML2020L8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

30V Nch+Nch Middle Power MOSFET

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]
Rohm Semiconductor UT6K3TCR1	1.5 V	42 mOhm	450 pF	2 N-Channel (Dual)	30 V	2 W	5.5 A	Surface Mount	MOSFET (Metal Oxide)	8-PowerUDFN	4 nC	150 °C	HUML2020L8
Rohm Semiconductor UT6K3TCR	1.5 V	42 mOhm	450 pF	2 N-Channel (Dual)	30 V	2 W	5.5 A	Surface Mount		6-PowerUDFN	4 nC		HUML2020L8	150 °C	-55 °C

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General part information

The Middle Power MOSFET UT6K3 is suitable for load switch and battery switch for mobile, DC/DC converter.

Technical documentation and resources

No documents available