Specification	FCP104N60F

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	145 nC
Input Capacitance (Ciss) (Max) @ Vds	6130 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	357 W
Rds On (Max) @ Id, Vgs [Max]	104 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

FCP104N60F Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-220

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FCP104N60	4165 pF	N-Channel	10 V	-55 °C	150 °C	82 nC	357 W	20 V	104 mOhm	600 V	3.5 V	MOSFET (Metal Oxide)	Through Hole	TO-220-3	TO-220-3	37 A
ON Semiconductor FCP104N60	4165 pF	N-Channel	10 V	-55 °C	150 °C	82 nC	357 W	20 V	104 mOhm	600 V	3.5 V	MOSFET (Metal Oxide)	Through Hole	TO-220-3	TO-220-3	37 A
ON Semiconductor FCP104N60F	6130 pF	N-Channel	10 V	-55 °C	150 °C	145 nC	357 W	20 V	104 mOhm	600 V	5 V	MOSFET (Metal Oxide)	Through Hole	TO-220-3	TO-220-3	37 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.02
		50	$ 4.77
		100	$ 4.09
		500	$ 3.64
		1000	$ 3.11
		2000	$ 2.93
Newark	Each	500	$ 3.00
ON Semiconductor	N/A	1	$ 2.59

Description

General part information

FCP104N60F Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET®II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Documents

Technical documentation and resources

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing