FCP104N60F Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-220

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FCP104N60	4165 pF	N-Channel	10 V	-55 °C	150 °C	82 nC	357 W	20 V	104 mOhm	600 V	3.5 V	MOSFET (Metal Oxide)	Through Hole	TO-220-3	TO-220-3	37 A
ON Semiconductor FCP104N60	4165 pF	N-Channel	10 V	-55 °C	150 °C	82 nC	357 W	20 V	104 mOhm	600 V	3.5 V	MOSFET (Metal Oxide)	Through Hole	TO-220-3	TO-220-3	37 A
ON Semiconductor FCP104N60F	6130 pF	N-Channel	10 V	-55 °C	150 °C	145 nC	357 W	20 V	104 mOhm	600 V	5 V	MOSFET (Metal Oxide)	Through Hole	TO-220-3	TO-220-3	37 A

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-220

Key Features

• 650 V @ TJ= 150°C

• Typ. RDS(on)= 96 mΩ

• Ultra Low Gate Charge (Typ. Qg= 63 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 280 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET®II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.