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STL45P3LLH6
Discrete Semiconductor Products

STL45P3LLH6

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STMicroelectronics

P-CHANNEL -30 V, 11 MOHM TYP., -45 A STRIPFET H6 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

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STL45P3LLH6
Discrete Semiconductor Products

STL45P3LLH6

Active
STMicroelectronics

P-CHANNEL -30 V, 11 MOHM TYP., -45 A STRIPFET H6 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL45P3LLH6
Current - Continuous Drain (Id) @ 25°C45 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]24 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2615 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)4.8 W, 75 W
Rds On (Max) @ Id, Vgs13 mOhm
Supplier Device PackagePowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.49

Description

General part information

STL45P3LLH6 Series

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.