Discrete Semiconductor Products
STP11NM60ND
ObsoleteSTMicroelectronics
N-CHANNEL 600 V, 370 MOHM TYP., 10 A FDMESH II POWER MOSFET IN A TO-220 PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
STP11NM60ND
ObsoleteSTMicroelectronics
N-CHANNEL 600 V, 370 MOHM TYP., 10 A FDMESH II POWER MOSFET IN A TO-220 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STP11NM60ND |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 90 W |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP11NM60ND Series
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources