STI4N62K3
ActiveN-CHANNEL 620 V, 1.7 OHM TYP., 3.8 A, MDMESH K3 POWER MOSFET IN AN I2PAK PACKAGE
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STI4N62K3
ActiveN-CHANNEL 620 V, 1.7 OHM TYP., 3.8 A, MDMESH K3 POWER MOSFET IN AN I2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STI4N62K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.8 A |
| Drain to Source Voltage (Vdss) | 620 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | I2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.49 | |
Description
General part information
STI4N62K3 Series
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Documents
Technical documentation and resources