STI4N62K3 Series

N-channel 620 V, 1.7 Ohm typ., 3.8 A, MDmesh K3 Power MOSFET in an I2PAK package

Catalog

N-channel 620 V, 1.7 Ohm typ., 3.8 A, MDmesh K3 Power MOSFET in an I2PAK package

Part	Power Dissipation (Max) [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
STMicroelectronics STI4N62K3	70 W	MOSFET (Metal Oxide)	22 nC	I2PAK	4.5 V	I2PAK TO-262-3 Long Leads TO-262AA	620 V	150 °C	-55 °C	10 V	Through Hole	30 V	N-Channel	550 pF	3.8 A	2 Ohm

Catalog

N-channel 620 V, 1.7 Ohm typ., 3.8 A, MDmesh K3 Power MOSFET in an I2PAK package

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.