STU7N65M2
ObsoletePOWER MOSFET, N CHANNEL, 5 A, 650 V, 0.98 OHM, 10 V, 3 V ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
STU7N65M2
ObsoletePOWER MOSFET, N CHANNEL, 5 A, 650 V, 0.98 OHM, 10 V, 3 V ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STU7N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 270 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 1.15 Ohm |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STU7N65M2 Series
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources