STU7N65M2 Series

N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a IPAK package

Catalog

N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a IPAK package

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	FET Type	Package / Case	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STU7N65M2	270 pF	60 W	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	4 V	150 °C	-55 °C	Through Hole	5 A	1.15 Ohm	650 V	9 nC	25 V	IPAK	TO-251	10 V

Catalog

N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a IPAK package

Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters.