GANE3R9-150QBAZ
Active150 V, 3.9 MOHM GALLIUM NITRIDE (GAN) FET IN A 4.0 MM X 6.0 MM VERY-THIN-PROFILE QUAD FLAT NO-LEAD PACKAGE (VQFN)
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GANE3R9-150QBAZ
Active150 V, 3.9 MOHM GALLIUM NITRIDE (GAN) FET IN A 4.0 MM X 6.0 MM VERY-THIN-PROFILE QUAD FLAT NO-LEAD PACKAGE (VQFN)
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Technical Specifications
Parameters and characteristics for this part
| Specification | GANE3R9-150QBAZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 25-PowerVFQFN |
| Power Dissipation (Max) | 65 W |
| Rds On (Max) @ Id, Vgs | 3.9 mOhm |
| Supplier Device Package | 25-VQFN (4x6) |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 6 V |
| Vgs (Max) [Min] | -4 V |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2090 | $ 11.24 | |
Description
General part information
GANE3R9-150QBA Series
The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Documents
Technical documentation and resources