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GANE3R9-150QBAZActive
Nexperia USA Inc.
150 V, 3.9 MOHM GALLIUM NITRIDE (GAN) FET IN A 4.0 MM X 6.0 MM VERY-THIN-PROFILE QUAD FLAT NO-LEAD PACKAGE (VQFN)
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GANE3R9-150QBAZ | Datasheet
Foster model GANE3R9-150QBA