GANE3R9-150QBA Series

150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)

Catalog

150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. GANE3R9-150QBAZ	150 V	3.9 mOhm	25-PowerVFQFN	N-Channel	-40 °C	150 °C	6 V	-4 V	2200 pF	20 nC	Surface Mount	100 A	65 W	25-VQFN (4x6)	2.1 V	GaNFET (Gallium Nitride)	5 V

Catalog

150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)

Description

The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.