A1F25M12W2-F1
NRNDACEPACK 1 POWER MODULE, FOURPACK TOPOLOGY, 1200 V, 25 MOHM TYP. SIC MOSFET GEN.2 WITH NTC
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A1F25M12W2-F1
NRNDACEPACK 1 POWER MODULE, FOURPACK TOPOLOGY, 1200 V, 25 MOHM TYP. SIC MOSFET GEN.2 WITH NTC
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Technical Specifications
Parameters and characteristics for this part
| Specification | A1F25M12W2-F1 |
|---|---|
| Configuration | 4 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 147 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175 °C |
| Package / Case | Module |
| Rds On (Max) @ Id, Vgs | 34 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.9 V |
Pricing
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Description
General part information
A1F25M12W2-F1 Series
This power module features a fourpack topology in an ACEPACK 1 module with NTC and integrates the most advanced silicon carbide MOSFETs of STMicroelectronics which are represented by the gen.2 technology. This modular solution can be used to realize complex topologies characterized by very high power density in order to meet the higest efficiency requirements.
Documents
Technical documentation and resources