A1F25M12W2-F1 Series

ACEPACK 1 power module, fourpack topology, 1200 V, 25 mOhm typ. SiC MOSFET gen.2 with NTC

Catalog

ACEPACK 1 power module, fourpack topology, 1200 V, 25 mOhm typ. SiC MOSFET gen.2 with NTC

Part	Package / Case	Mounting Type	Technology	Operating Temperature	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Configuration	Vgs(th) (Max) @ Id
STMicroelectronics A1F25M12W2-F1	Module	Chassis Mount	Silicon Carbide (SiC)	175 °C	34 mOhm	147 nC	3500 pF	50 A	1.2 kV	1200 V	4 N-Channel	4.9 V

Catalog

ACEPACK 1 power module, fourpack topology, 1200 V, 25 mOhm typ. SiC MOSFET gen.2 with NTC

Description

This power module features a fourpack topology in an ACEPACK 1 module with NTC and integrates the most advanced silicon carbide MOSFETs of STMicroelectronics which are represented by the gen.2 technology. This modular solution can be used to realize complex topologies characterized by very high power density in order to meet the higest efficiency requirements.