Discrete Semiconductor Products
TIP35CW
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 25 A, 125 W, TO-247, THROUGH HOLE
Discrete Semiconductor Products
TIP35CW
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 25 A, 125 W, TO-247, THROUGH HOLE
Technical Specifications
Parameters and characteristics for this part
| Specification | TIP35CW |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 25 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TIP35CW Series
The devices are manufactured in planar technology with "base island" layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Documents
Technical documentation and resources