Catalog
Complementary power transistors
Description
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The devices are manufactured in planar technology with "base island" layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
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Complementary power transistors
Complementary power transistors
| Part | Package / Case | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | Transistor Type | Current - Collector (Ic) (Max) [Max] | Mounting Type | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-247-3 | TO-247-3 | 4 V | 150 °C | NPN | 25 A | Through Hole | 3 MHz | 10 | 1 mA | 100 V |