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STL3NM60N
Discrete Semiconductor Products

STL3NM60N

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STMicroelectronics

N-CHANNEL 600 V, 1.5 OHM TYP., 2.2 A MDMESH II POWER MOSFET IN A POWERFLAT 3.3X3.3 HV PACKAGE

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STL3NM60N
Discrete Semiconductor Products

STL3NM60N

Active
STMicroelectronics

N-CHANNEL 600 V, 1.5 OHM TYP., 2.2 A MDMESH II POWER MOSFET IN A POWERFLAT 3.3X3.3 HV PACKAGE

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Technical Specifications

Parameters and characteristics for this part

SpecificationSTL3NM60N
Current - Continuous Drain (Id) @ 25°C650 mA
Current - Continuous Drain (Id) @ 25°C2.2 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]9.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]188 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)22 W, 2 W
Rds On (Max) @ Id, Vgs1.8 Ohm
Supplier Device PackagePowerFlat™ (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 7834$ 3.12
NewarkEach (Supplied on Cut Tape) 1$ 1.90
10$ 1.51
25$ 1.30
50$ 1.13
100$ 0.94
250$ 0.80
500$ 0.62
1000$ 0.58

Description

General part information

STL3NM60N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources