Discrete Semiconductor Products

SI2323DDS-T1-GE3

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MOSFET P-CH 20V 5.3A SOT-23

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Discrete Semiconductor Products

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MOSFET P-CH 20V 5.3A SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	SI2323DDS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1160 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.7 W, 960 mW
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI2323DDS-T1-GE3	20 V	Surface Mount	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	1 V	SOT-23	1.7 W 960 mW	8 V	39 mOhm	5.3 A	P-Channel	MOSFET (Metal Oxide)	1160 pF	36 nC	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI2323DS-T1-E3	20 V	Surface Mount	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	1 V	SOT-23-3 (TO-236)	750 mW	8 V	39 mOhm	3.7 A	P-Channel	MOSFET (Metal Oxide)	1020 pF		-55 °C	150 °C	19 nC
Vishay General Semiconductor - Diodes Division SI2323CDS-T1-GE3	20 V	Surface Mount	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	1 V	SOT-23-3 (TO-236)	1.25 W 2.5 W	8 V	39 mOhm	6 A	P-Channel	MOSFET (Metal Oxide)	1090 pF	25 nC	-55 °C	150 °C

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General part information

P-Channel 20 V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23

Technical documentation and resources