SI2323 Series

Catalog

MOSFET P-CH 20V 5.3A SOT-23

Part	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI2323DDS-T1-GE3	20 V	Surface Mount	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	1 V	SOT-23	1.7 W 960 mW	8 V	39 mOhm	5.3 A	P-Channel	MOSFET (Metal Oxide)	1160 pF	36 nC	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI2323DS-T1-E3	20 V	Surface Mount	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	1 V	SOT-23-3 (TO-236)	750 mW	8 V	39 mOhm	3.7 A	P-Channel	MOSFET (Metal Oxide)	1020 pF		-55 °C	150 °C	19 nC
Vishay General Semiconductor - Diodes Division SI2323CDS-T1-GE3	20 V	Surface Mount	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	1 V	SOT-23-3 (TO-236)	1.25 W 2.5 W	8 V	39 mOhm	6 A	P-Channel	MOSFET (Metal Oxide)	1090 pF	25 nC	-55 °C	150 °C