Discrete Semiconductor Products
SI2323CDS-T1-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 6A SOT23-3
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
Discrete Semiconductor Products
SI2323CDS-T1-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 6A SOT23-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SI2323CDS-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 2.5 W, 1.25 W |
| Rds On (Max) @ Id, Vgs | 39 mOhm |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
| Part | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | FET Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | Surface Mount | 1.8 V 4.5 V | SC-59 SOT-23-3 TO-236-3 | 1 V | SOT-23 | 1.7 W 960 mW | 8 V | 39 mOhm | 5.3 A | P-Channel | MOSFET (Metal Oxide) | 1160 pF | 36 nC | -55 °C | 150 °C | |
Vishay General Semiconductor - Diodes Division | 20 V | Surface Mount | 1.8 V 4.5 V | SC-59 SOT-23-3 TO-236-3 | 1 V | SOT-23-3 (TO-236) | 750 mW | 8 V | 39 mOhm | 3.7 A | P-Channel | MOSFET (Metal Oxide) | 1020 pF | -55 °C | 150 °C | 19 nC | |
Vishay General Semiconductor - Diodes Division | 20 V | Surface Mount | 1.8 V 4.5 V | SC-59 SOT-23-3 TO-236-3 | 1 V | SOT-23-3 (TO-236) | 1.25 W 2.5 W | 8 V | 39 mOhm | 6 A | P-Channel | MOSFET (Metal Oxide) | 1090 pF | 25 nC | -55 °C | 150 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.67 | |
| 10 | $ 0.50 | |||
| 100 | $ 0.36 | |||
| 500 | $ 0.31 | |||
| 1000 | $ 0.29 | |||
| Digi-Reel® | 1 | $ 0.67 | ||
| 10 | $ 0.50 | |||
| 100 | $ 0.36 | |||
| 500 | $ 0.31 | |||
| 1000 | $ 0.29 | |||
| Tape & Reel (TR) | 3000 | $ 0.27 | ||
| 6000 | $ 0.26 | |||
| 9000 | $ 0.25 | |||
| 15000 | $ 0.24 | |||
| 21000 | $ 0.24 | |||
Description
General part information
SI2323 Series
P-Channel 20 V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Documents
Technical documentation and resources