Discrete Semiconductor Products
STP180N4F6
ActiveSTMicroelectronics
N-CHANNEL 40 V, 2.1 MOHM TYP., 120 A STRIPFET F6 POWER MOSFET IN A TO-220 PACKAGE
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Discrete Semiconductor Products
STP180N4F6
ActiveSTMicroelectronics
N-CHANNEL 40 V, 2.1 MOHM TYP., 120 A STRIPFET F6 POWER MOSFET IN A TO-220 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STP180N4F6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 190 W |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 650 | $ 1.67 | |
Description
General part information
STP180N4F6 Series
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources