STP180N4F6 Series

N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F6 Power MOSFET in a TO-220 package

Catalog

N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F6 Power MOSFET in a TO-220 package

Part	Package / Case	Technology	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	FET Type
STMicroelectronics STP180N4F6	TO-220-3	MOSFET (Metal Oxide)	190 W	TO-220	120 A	40 V	4.5 V 10 V	Through Hole	20 V	N-Channel

Catalog

N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F6 Power MOSFET in a TO-220 package

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.