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TO-220AB
Discrete Semiconductor Products

PSMN016-100PS,127

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 100V 57A TO220AB

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TO-220AB
Discrete Semiconductor Products

PSMN016-100PS,127

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 100V 57A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN016-100PS,127
Current - Continuous Drain (Id) @ 25°C57 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2404 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]148 W
Rds On (Max) @ Id, Vgs16 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.27
10$ 1.88
100$ 1.50
500$ 1.27
1000$ 1.08
2000$ 1.02
5000$ 0.98

Description

General part information

PSMN016 Series

N-Channel 100 V 57A (Tj) 148W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources