Discrete Semiconductor Products

PSMN016-100YS,115

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MOSFET N-CH 100V 51A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 100V 51A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN016-100YS,115

Current - Continuous Drain (Id) @ 25°C	51 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	2744 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	117 W
Rds On (Max) @ Id, Vgs	16.3 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
Freescale Semiconductor - NXP PSMN016-100PS,127	10 V 49 nC	100 V	57 A	TO-220-3	10 V	Through Hole	MOSFET (Metal Oxide)	16 mOhm	20 V	-55 °C	175 ░C	148 W	2404 pF	N-Channel	TO-220AB
Freescale Semiconductor - NXP PSMN016-100BS,118	10 V 49 nC	100 V	57 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	Surface Mount	MOSFET (Metal Oxide)	16 mOhm	20 V	-55 °C	175 ░C	148 W	2404 pF	N-Channel	D2PAK
Freescale Semiconductor - NXP PSMN016-100YS,115	54 nC	100 V	51 A	SC-100 SOT-669	10 V	Surface Mount	MOSFET (Metal Oxide)	16.3 mOhm	20 V	-55 °C	175 ░C			N-Channel	LFPAK56 Power-SO8	2744 pF	117 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 51A (Tc) 117W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources