PSMN016 Series
Manufacturer: Freescale Semiconductor - NXP
MOSFET N-CH 100V 57A TO220AB
| Part | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | Rds On (Max) @ Id, Vgs | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 10 V 49 nC | 100 V | 57 A | TO-220-3 | 10 V | Through Hole | MOSFET (Metal Oxide) | 16 mOhm | 20 V | -55 °C | 175 ░C | 148 W | 2404 pF | N-Channel | TO-220AB | ||
Freescale Semiconductor - NXP | 10 V 49 nC | 100 V | 57 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | Surface Mount | MOSFET (Metal Oxide) | 16 mOhm | 20 V | -55 °C | 175 ░C | 148 W | 2404 pF | N-Channel | D2PAK | ||
Freescale Semiconductor - NXP | 54 nC | 100 V | 51 A | SC-100 SOT-669 | 10 V | Surface Mount | MOSFET (Metal Oxide) | 16.3 mOhm | 20 V | -55 °C | 175 ░C | N-Channel | LFPAK56 Power-SO8 | 2744 pF | 117 W |