Zenode.ai Logo
Beta
IRF9540NPBF
Discrete Semiconductor Products

IRF9540NPBF

Active
INFINEON

POWER MOSFET, P CHANNEL, 100 V, 23 A, 0.117 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Search across all available documentation for this part.

IRF9540NPBF
Discrete Semiconductor Products

IRF9540NPBF

Active
INFINEON

POWER MOSFET, P CHANNEL, 100 V, 23 A, 0.117 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9540NPBF
Current - Continuous Drain (Id) @ 25°C23 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]97 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1300 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]140 W
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 4903$ 1.79
Tube 1$ 1.39
50$ 1.12
100$ 0.89
500$ 0.75
1000$ 0.61
2000$ 0.58
5000$ 0.55
10000$ 0.52
NewarkEach 1$ 1.63
10$ 1.34
100$ 0.85
500$ 0.70
1000$ 0.61
3000$ 0.59
10000$ 0.54

Description

General part information

IRF9540 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.