Specification	IRF9540NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	3.1 W, 110 W
Rds On (Max) @ Id, Vgs	117 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF9540 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
INFINEON IRF9540NLPBF	10 V	4 V	100 V	TO-262	110 nC	117 mOhm	P-Channel	23 A	MOSFET (Metal Oxide)	20 V	Through Hole	1450 pF	I2PAK TO-262-3 Long Leads TO-262AA	3.1 W 110 W	150 °C	-55 °C
INFINEON IRF9540NSTRLPBF	10 V	4 V	100 V	D2PAK	110 nC	117 mOhm	P-Channel	23 A	MOSFET (Metal Oxide)	20 V	Surface Mount	1450 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 110 W	150 °C	-55 °C
INFINEON IRF9540NPBF	10 V	4 V	100 V	TO-220AB			P-Channel	23 A	MOSFET (Metal Oxide)	20 V	Through Hole	1300 pF	TO-220-3		150 °C	-55 °C	97 nC	140 W
INFINEON IRF9540NSTRRPBF	10 V	4 V	100 V	D2PAK	110 nC	117 mOhm	P-Channel	23 A	MOSFET (Metal Oxide)	20 V	Surface Mount	1450 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 110 W	150 °C	-55 °C