IRF9540 Series
Manufacturer: INFINEON
IR MOSFET™ P-CHANNEL MOSFET ; I2PAK TO-262 PACKAGE; 117 MOHM;
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 10 V | 4 V | 100 V | TO-262 | 110 nC | 117 mOhm | P-Channel | 23 A | MOSFET (Metal Oxide) | 20 V | Through Hole | 1450 pF | I2PAK TO-262-3 Long Leads TO-262AA | 3.1 W 110 W | 150 °C | -55 °C | ||
INFINEON | 10 V | 4 V | 100 V | D2PAK | 110 nC | 117 mOhm | P-Channel | 23 A | MOSFET (Metal Oxide) | 20 V | Surface Mount | 1450 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.1 W 110 W | 150 °C | -55 °C | ||
INFINEON | 10 V | 4 V | 100 V | TO-220AB | P-Channel | 23 A | MOSFET (Metal Oxide) | 20 V | Through Hole | 1300 pF | TO-220-3 | 150 °C | -55 °C | 97 nC | 140 W | |||
INFINEON | 10 V | 4 V | 100 V | D2PAK | 110 nC | 117 mOhm | P-Channel | 23 A | MOSFET (Metal Oxide) | 20 V | Surface Mount | 1450 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.1 W 110 W | 150 °C | -55 °C |