Discrete Semiconductor Products
STU9N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.72 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN IPAK PACKAGE
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Discrete Semiconductor Products
STU9N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.72 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN IPAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STU9N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 320 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 780 mOhm |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1763 | $ 1.85 | |
Description
General part information
STU9N60M2 Series
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Documents
Technical documentation and resources