STU9N60M2 Series

N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package

Catalog

N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Supplier Device Package	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STU9N60M2	5.5 A	IPAK	TO-251	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	780 mOhm	600 V	320 pF	150 °C	10 V	4 V	25 V	60 W	Through Hole	MOSFET (Metal Oxide)	10 nC

Catalog

N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package

Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.