Discrete Semiconductor Products

1N649-1

Active

DIODE GEN PURP 600V 400MA DO35

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 400MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N649-1

Current - Average Rectified (Io)	400 mA
Current - Reverse Leakage @ Vr	50 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-204AH (DO-35)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io)	Supplier Device Package
Microchip Technology 1N649UR-1	175 ░C	-65 C	Standard Recovery >500ns	200 mA	50 nA	Standard	1 V	Surface Mount	600 V	DO-213AA	400 mA	DO-213AA
Microchip Technology 1N649-1	175 ░C	-65 C	Standard Recovery >500ns	200 mA	50 nA	Standard	1 V	Through Hole	600 V	Axial DO-204AH DO-35	400 mA	DO-204AH (DO-35)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 400mA Through Hole DO-204AH (DO-35)

Technical documentation and resources