1N649UR-1

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DIODE GP 600V 400MA DO213AA

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Discrete Semiconductor Products

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DIODE GP 600V 400MA DO213AA

Technical Specifications

Parameters and characteristics for this part

Specification	1N649UR-1

Current - Average Rectified (Io)	400 mA
Current - Reverse Leakage @ Vr	50 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-213AA
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-213AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io)	Supplier Device Package
Microchip Technology 1N649UR-1	175 ░C	-65 C	Standard Recovery >500ns	200 mA	50 nA	Standard	1 V	Surface Mount	600 V	DO-213AA	400 mA	DO-213AA
Microchip Technology 1N649-1	175 ░C	-65 C	Standard Recovery >500ns	200 mA	50 nA	Standard	1 V	Through Hole	600 V	Axial DO-204AH DO-35	400 mA	DO-204AH (DO-35)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	224	$ 3.67

General part information

Diode 600 V 400mA Surface Mount DO-213AA

Technical documentation and resources