Discrete Semiconductor Products
STD52P3LLH6
ActiveSTMicroelectronics
P-CHANNEL 30 V, 0.01 OHM TYP., 52 A STRIPFET H6 POWER MOSFET IN A DPAK PACKAGE
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Discrete Semiconductor Products
STD52P3LLH6
ActiveSTMicroelectronics
P-CHANNEL 30 V, 0.01 OHM TYP., 52 A STRIPFET H6 POWER MOSFET IN A DPAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STD52P3LLH6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 52 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 12 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2012 | $ 1.81 | |
Description
General part information
STD52P3LLH6 Series
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources