STD52P3LLH6 Series

P-channel 30 V, 0.01 Ohm typ., 52 A STripFET H6 Power MOSFET in a DPAK package

Catalog

P-channel 30 V, 0.01 Ohm typ., 52 A STripFET H6 Power MOSFET in a DPAK package

Part	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type
STMicroelectronics STD52P3LLH6	175 °C	MOSFET (Metal Oxide)	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	33 nC	P-Channel	DPAK	12 mOhm	70 W	20 V	4.5 V 10 V	3350 pF	52 A	Surface Mount

Catalog

P-channel 30 V, 0.01 Ohm typ., 52 A STripFET H6 Power MOSFET in a DPAK package

Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.