Discrete Semiconductor Products
STL7N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.027 OHM TYP., 7 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE
Discrete Semiconductor Products
STL7N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.027 OHM TYP., 7 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL7N10F7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 2.9 W, 50 W |
| Rds On (Max) @ Id, Vgs | 35 mOhm |
| Supplier Device Package | PowerFlat™ (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL7N10F7 Series
This device utilizes the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Documents
Technical documentation and resources