
Discrete Semiconductor Products
TPCC8104,L1Q
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, 0.0088 Ω@10V, TSON ADVANCE, U-MOSⅥ
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
TPCC8104,L1Q
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, 0.0088 Ω@10V, TSON ADVANCE, U-MOSⅥ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TPCC8104,L1Q |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 58 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 700 mW, 27 W |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V, -25 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
TPCC8104 Series
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, 0.0088 Ω@10V, TSON Advance, U-MOSⅥ
Documents
Technical documentation and resources