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TPN4R203NC - 12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0042 Ω@10V, TSON Advance, U-MOSⅧ
Discrete Semiconductor Products

TPCC8104,L1Q

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, 0.0088 Ω@10V, TSON ADVANCE, U-MOSⅥ

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TPN4R203NC - 12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0042 Ω@10V, TSON Advance, U-MOSⅧ
Discrete Semiconductor Products

TPCC8104,L1Q

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, 0.0088 Ω@10V, TSON ADVANCE, U-MOSⅥ

Technical Specifications

Parameters and characteristics for this part

SpecificationTPCC8104,L1Q
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]58 nC
Input Capacitance (Ciss) (Max) @ Vds2260 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)700 mW, 27 W
Rds On (Max) @ Id, Vgs8.8 mOhm
Supplier Device Package8-TSON Advance (3.1x3.1)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V, -25 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

TPCC8104 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, 0.0088 Ω@10V, TSON Advance, U-MOSⅥ

Documents

Technical documentation and resources

MOSFET Self-Turn-On Phenomenon

Application Note

Structures and Characteristics: Power MOSFET Application Notes

Application Note

Electrical Characteristics: Power MOSFET Application Notes

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices

Application Note

Simplified CFD Model Application Note

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1

Application Note

Selection Guide MOSFETs 2025 Rev1.0

Catalog

Calculating the Temperature of Discrete Semiconductor Devices

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes

Application Note

MOSFET SPICE model grade

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices

Application Note

The thermal stability and thermal design:Bipolar Transistor Application Notes

Application Note

Resonant Circuits and Soft Switching

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

Application Note

MOSFET Secondary Breakdown

Application Note

Hints and Tips for Thermal Design part3

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes

Application Note

TPCC8104 Data sheet/Japanese

Data sheet

Reverse Recovery Operation and Destruction of MOSFET Body Diode

Application Note

The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2

Application Note

RC Snubbers for Step-Down Converters

Application Note

Maximum Ratings: Power MOSFET Application Notes

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes

Application Note

Derating of the MOSFET Safe Operating Area

Application Note

Motor Control (Vacuum Cleaners)

Application Note

The terms used in data sheets:Bipolar Transistor Application Notes

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2

Application Note

The maximum ratings:Bipolar Transistor Application Notes

Application Note

TPCC8104 Data sheet/English

Data sheet

Avalanche energy calculation

Application Note