Discrete Semiconductor Products

TPCC8104,L1Q(CM

Active

MOSFET P-CH 30V 20A 8TSON

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 30V 20A 8TSON

Technical Specifications

Parameters and characteristics for this part

Specification	TPCC8104,L1Q(CM

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds	2260 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	700 mW, 27 W
Rds On (Max) @ Id, Vgs	8.8 mOhm
Supplier Device Package	8-TSON Advance (3.1x3.1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V, -25 V
Vgs(th) (Max) @ Id	2 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, 0.0088 Ω@10V, TSON Advance, U-MOSⅥ

Part	FET Type	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TPCC8104,L1Q(CM	P-Channel	27 W 700 mW	8-TSON Advance (3.1x3.1)	Surface Mount	30 V	8.8 mOhm	2260 pF	-25 V 20 V	4.5 V 10 V	150 °C	2 V	MOSFET (Metal Oxide)	58 nC	8-PowerVDFN	20 A
Toshiba Semiconductor and Storage TPCC8104,L1Q	P-Channel	27 W 700 mW	8-TSON Advance (3.1x3.1)	Surface Mount	30 V	8.8 mOhm	2260 pF	-25 V 20 V	4.5 V 10 V	150 °C	2 V	MOSFET (Metal Oxide)	58 nC	8-PowerVDFN	20 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, 0.0088 Ω@10V, TSON Advance, U-MOSⅥ

Technical documentation and resources

No documents available