High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, 0.0088 Ω@10V, TSON Advance, U-MOSⅥ
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, 0.0088 Ω@10V, TSON Advance, U-MOSⅥ
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, 0.0088 Ω@10V, TSON Advance, U-MOSⅥ
| Part | FET Type | Power Dissipation (Max) | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | P-Channel | 27 W 700 mW | 8-TSON Advance (3.1x3.1) | Surface Mount | 30 V | 8.8 mOhm | 2260 pF | -25 V 20 V | 4.5 V 10 V | 150 °C | 2 V | MOSFET (Metal Oxide) | 58 nC | 8-PowerVDFN | 20 A |
 Toshiba Semiconductor and Storage | P-Channel | 27 W 700 mW | 8-TSON Advance (3.1x3.1) | Surface Mount | 30 V | 8.8 mOhm | 2260 pF | -25 V 20 V | 4.5 V 10 V | 150 °C | 2 V | MOSFET (Metal Oxide) | 58 nC | 8-PowerVDFN | 20 A |