Discrete Semiconductor Products

EPC2307ENGRT

Active

Efficient Power Conversion Corporation

TRANS GAN 200V .010OHM 7QFN

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

Efficient Power Conversion Corporation

TRANS GAN 200V .010OHM 7QFN

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2307ENGRT

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.6 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	7-PowerWQFN
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	7-QFN (3x5)
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

Part	Utilized IC / Part	Output Type	Supplied Contents	Board Type	Max Output Power x Channels @ Load	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Efficient Power Conversion Corporation EPC9192KIT	EPC2307	2-Channel (Stereo)	Board(s)	Fully Populated	2 channels 700 W	85 V	-42 V
Efficient Power Conversion Corporation EPC2307ENGRT								7-PowerWQFN	6 V	-4 V	N-Channel	150 °C	-40 °C	5 V	10.6 nC	10 mOhm	Surface Mount	GaNFET (Gallium Nitride)	7-QFN (3x5)	48 A	200 V	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 48A (Ta) Surface Mount 7-QFN (3x5)

Technical documentation and resources