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TO-39
Discrete Semiconductor Products

2N5582

Active
Microchip Technology

SMALL-SIGNAL BJT TO-46 ROHS COMPLIANT: YES

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TO-39
Discrete Semiconductor Products

2N5582

Active
Microchip Technology

SMALL-SIGNAL BJT TO-46 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N5582
Current - Collector (Ic) (Max) [Max]800 mA
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-206AB, TO-46-3 Metal Can
Power - Max [Max]500 mW
Supplier Device PackageTO-46-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 114$ 7.27
Microchip DirectN/A 1$ 7.83
NewarkEach 100$ 7.27
500$ 6.99

Description

General part information

JAN2N5582-Transistor Series

This specification covers the performance requirements for NPN, silicon, switching 2N5581 and 2N5582 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/423. The device packages for the encapsulated device types are as follows: (2N5581 and 2N5582) (similar to TO-46).

Documents

Technical documentation and resources