JAN2N5582-Transistor Series

NPN Silicon Switching 50V, 0.8A

Catalog

NPN Silicon Switching 50V, 0.8A

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Package / Case	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Qualification
Microchip Technology JAN2N5582	10 µA	-55 °C	200 C	500 mW	800 mA	TO-46-3	50 V	NPN	Through Hole	TO-206AB TO-46-3 Metal Can	Military	100	1 V	MIL-PRF-19500/423
Microchip Technology 2N5582	10 µA	-55 °C	200 C	500 mW	800 mA	TO-46-3	50 V	NPN	Through Hole	TO-206AB TO-46-3 Metal Can		100	1 V

Catalog

NPN Silicon Switching 50V, 0.8A

Key Features

- The device packages for the encapsulated device types are as follows: (2N5581 and 2N5582) (similar to TO-46).

Description

This specification covers the performance requirements for NPN, silicon, switching 2N5581 and 2N5582 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/423. The device packages for the encapsulated device types are as follows: (2N5581 and 2N5582) (similar to TO-46).