STN1NK60ZL
ActiveN-CHANNEL 600 V, 10 OHM TYP., 0.44 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN SOT-223 PACKAGE
STN1NK60ZL
ActiveN-CHANNEL 600 V, 10 OHM TYP., 0.44 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN SOT-223 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STN1NK60ZL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300 mA |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 94 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 3.3 W |
| Rds On (Max) @ Id, Vgs | 15 Ohm |
| Supplier Device Package | SOT-223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STN1NK60ZL Series
This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources