STN1NK60ZL Series

N-channel 600 V, 10 Ohm typ., 0.44 A Zener-protected SuperMESH(TM) Power MOSFET in SOT-223 package

Catalog

N-channel 600 V, 10 Ohm typ., 0.44 A Zener-protected SuperMESH(TM) Power MOSFET in SOT-223 package

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STN1NK60ZL	Surface Mount	150 °C	-55 °C	30 V	10 V	4.5 V	3.3 W	15 Ohm	600 V	MOSFET (Metal Oxide)	94 pF	SOT-223	300 mA	TO-261-4 TO-261AA	N-Channel	6.9 nC

Catalog

N-channel 600 V, 10 Ohm typ., 0.44 A Zener-protected SuperMESH(TM) Power MOSFET in SOT-223 package

Description

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.