Discrete Semiconductor Products
STP150N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.0036 OHM TYP., 110 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE
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Discrete Semiconductor Products
STP150N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.0036 OHM TYP., 110 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STP150N10F7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 8115 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 250 W |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1403 | $ 2.75 | |
Description
General part information
STP150N10F7 Series
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources