Discrete Semiconductor Products

SCT040TO65G3

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STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 40 MOHM TYP., 35 A IN A TO-LL PACKAGE

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DocumentsSCT040TO65G3 | Datasheet +24

Discrete Semiconductor Products

SCT040TO65G3

Active

STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 40 MOHM TYP., 35 A IN A TO-LL PACKAGE

Deep-Dive with AI

DocumentsSCT040TO65G3 | Datasheet +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT040TO65G3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	853 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max) [Max]	288 W
Rds On (Max) @ Id, Vgs	63 mOhm
Supplier Device Package	TOLL (HV)
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT040TO65G3 Series

Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs
STMicroelectronics SCT040TO65G3	35 A	853 pF	Surface Mount	15 V 18 V	42.5 nC	650 V	288 W	8-PowerSFN	N-Channel	4.2 V	TOLL (HV)	175 °C	-55 °C	-5 V 18 V	63 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	41	$ 9.62
Newark	Each (Supplied on Cut Tape)	1	$ 9.62
		10	$ 7.11
		25	$ 6.81
		50	$ 6.41
		100	$ 6.09
		250	$ 5.78
		500	$ 5.59

Description

General part information

SCT040TO65G3 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.