SCT040TO65G3 Series

Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

Catalog

Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs
STMicroelectronics SCT040TO65G3	35 A	853 pF	Surface Mount	15 V 18 V	42.5 nC	650 V	288 W	8-PowerSFN	N-Channel	4.2 V	TOLL (HV)	175 °C	-55 °C	-5 V 18 V	63 mOhm

Catalog

Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.