
Discrete Semiconductor Products
IRF9610PBF-BE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 1.8A TO220AB
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Discrete Semiconductor Products
IRF9610PBF-BE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 1.8A TO220AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF9610PBF-BE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.8 A |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 11 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) @ Id, Vgs | 3 Ohm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.14 | |
| 10 | $ 1.37 | |||
| 100 | $ 0.93 | |||
| 500 | $ 0.74 | |||
| 1000 | $ 0.68 | |||
| 2000 | $ 0.63 | |||
| 5000 | $ 0.57 | |||
Description
General part information
IRF9610 Series
P-Channel 200 V 1.8A (Tc) 20W (Tc) Through Hole TO-220AB
Documents
Technical documentation and resources